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december 2009 FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 1 www.fairchildsemi.com FDME1034CZT rev.c FDME1034CZT complementary powertrench ? mosfet n-channel: 20 v, 3.4 a, 66 m ? p-channel: -20 v, -2.3 a, 142 m? features q1: n-channel ? max r ds(on) = 66 m ? at v gs = 4.5 v, i d = 3.4 a ? max r ds(on) = 86 m ? at v gs = 2.5 v, i d = 2.9 a ? max r ds(on) = 113 m ? at v gs = 1.8 v, i d = 2.5 a ? max r ds(on) = 160 m ? at v gs = 1.5 v, i d = 2.1 a q2: p-channel ? max r ds(on) = 142 m ? at v gs = -4.5 v, i d = -2.3 a ? max r ds(on) = 213 m ? at v gs = -2.5 v, i d = -1.8 a ? max r ds(on) = 331 m ? at v gs = -1.8 v, i d = -1.5 a ? max r ds(on) = 530 m ? at v gs = -1.5 v, i d = -1.2 a ? low profile: 0.55 mm maximum in the new package microfet 1.6 x 1.6 thin ? free from halogenated compounds and antimony oxides ? hbm esd protection level > 1600v (note3) ? rohs compliant general description this device is designed specifically as a single package solution for a dc/dc ?switching? mosfet in cellular handset and other ultra-portable applications. it features an independent n-channel & p-channel mosfet with low on-state resistance for minimum conduction losses. the gate charge of each mosfet is also minimized to allow high frequency switching directly from the controlling device. the microfet 1.6x1.6 thin pa ckage offers exceptio nal thermal performance for it's physical size and is well suited to switching and linear mode applications. applications ? dc-dc conversion ? level shifted load switch g2 s1 g1 d2 s2 d1 microfet 1.6x1.6 thin d1 d2 top bottom pin 1 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter q1 q2 units v ds drain to source voltage 20 -20 v v gs gate to source voltage 8 8 v i d drain current -continuous t a = 25 c (note 1a) 3.4 -2.3 a -pulsed 6 -6 p d power dissipation for single operation t a = 25 c (note 1a) 1.3 w power dissipation for single operation t a = 25 c (note 1b) 0.6 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (single operation) (note 1a) 95 c/w r ja thermal resistance, junction to ambient (single operation) (note 1b) 210 device marking device package reel size tape width quantity 5t FDME1034CZT microfet 1.6x1.6 thin 7 ?? 8 mm 5000 units 3 2 1 4 5 6 s1 g1 d1 s2 g2 d2
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 2 www.fairchildsemi.com FDME1034CZT rev.c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics symbol parameter test conditions type min typ max units bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0 v i d = -250 p a, v gs = 0 v q1 q2 20 -20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c i d = -250 p a, referenced to 25 c q1 q2 16 -12 mv / c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v v ds = -16 v, v gs = 0 v q1 q2 1 -1 p a i gss gate to source leakage current v gs = 8 v, v ds = 0 v all 10 p a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a v gs = v ds , i d = -250 p a q1 q2 0.4 -0.4 0.7 -0.6 1.0 -1.0 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c q1 q2 -3 2 mv/c r ds(on) drain to source on resistance v gs = 4.5 v, i d = 3.4 a q1 55 66 m : v gs = 2.5 v, i d = 2.9 a 68 86 v gs = 1.8 v, i d = 2.5 a 85 113 v gs = 1.5 v, i d = 2.1 a 106 160 v gs = 4.5 v, i d = 3.4 a , t j = 125 c 76 112 v gs = -4.5 v, i d = -2.3 a q2 95 142 v gs = -2.5 v, i d = -1.8 a 120 213 v gs = -1.8 v, i d = -1.5 a 150 331 v gs = -1.5 v, i d = -1.2 a 190 530 v gs = -4.5 v, i d = -2.3 a , t j = 125 c 128 190 g fs forward transconductance v ds = 4.5 v, i d =3.4 a v ds = -4.5 v, i d = -2.3 a q1 q2 9 7 s c iss input capacitance q1 v ds = 10 v, v gs = 0 v, f = 1 mhz q2 v ds = -10 v, v gs = 0 v, f = 1 mhz q1 q2 225 305 300 405 pf c oss output capacitance q1 q2 40 55 55 75 pf c rss reverse transfer capacitance q1 q2 25 50 40 75 pf t d(on) turn-on delay time q1 v dd = 10 v, i d = 1 a v gs = 4.5 v, r gen = 6 : q2 v dd = -10 v, i d = -1 a v gs = -4.5 v, r gen = 6 : q1 q2 4.5 4.7 10 10 ns t r rise time q1 q2 2.0 4.8 10 10 t d(off) turn-off delay time q1 q2 15 33 27 53 t f fall time q1 q2 1.7 16 10 29 q g total gate charge q1 v dd = 10 v, i d = 3.4 a v gs = 4.5 v q2 v dd = -10 v, i d = -2.3 a v gs = -4.5 v q1 q2 3 5.5 4.2 7.7 nc q gs gate to source gate charge q1 q2 0.4 0.6 q gd gate to drain ?miller? charge q1 q2 0.6 1.4
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 3 www.fairchildsemi.com FDME1034CZT rev.c electrical characteristics t j = 25 c unless otherwise noted drain-source diode characteristics symbol parameter test conditions type min typ max units v sd source to drain diode forward voltage v gs = 0 v, i s = 0.9 a (note 2) v gs = 0 v, i s = -0.9 a (note 2) q1 q2 0.7 -0.8 1.2 -1.2 v t rr reverse recovery time q1 i f = 3.4 a, di/dt = 100 a/ p s q2 i f = -2.3 a, di/dt = 100 a/ p s q1 q2 8.5 16 17 29 ns q rr reverse recovery time q1 q2 1.4 4.4 10 10 nc notes: 1. r t ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2. pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3. the diode connected between the gate and source serves only as protection esd. no gate overvoltage rating is implied. a. 95 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 210 c/w when mounted on a minimum pad of 2 oz copper.
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 4 www.fairchildsemi.com FDME1034CZT rev.c typical characteristics (q1 n-channel) t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 2 4 6 v gs = 1.8 v v gs = 3 v v gs = 4.5 v v gs = 1.5 v v gs = 2.5 v pulse duration = 80 s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0246 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 2.5 v v gs = 3 v normalized drain to source on-resistance i d , drain current (a) v gs = 4.5 v v gs = 1.8 v v gs = 1.5 v pulse duration = 80 s duty cycle = 0.5% max n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 3.4 a v gs = 4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 50 100 150 200 250 300 t j = 125 o c i d = 3.4 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m ? ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 0 2 4 6 t j = 150 o c v ds = 5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 5 www.fairchildsemi.com FDME1034CZT rev.c figure 7. 0123 0.0 1.5 3.0 4.5 i d = 3.4 a v dd = 10 v v dd = 8 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 12 v gate charge characteristics figure 8. 0.1 1 10 20 1 100 500 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.1 1 10 50 0.01 0.1 1 10 1 s 100 s dc 100 ms 10 ms 1 ms 10 s i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r ja = 210 o c/w t a = 25 o c f o r w a r d b i a s s a f e operating area figure 10. 03691215 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v gs = 0 v t j = 25 o c t j = 125 o c v gs , gate to source voltage (v) i g , gate leakage current (a) g a t e l e a k a g e c u r r e n t v s g a t e t o s o u r c e v o l t a g e figure 11. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 1 10 100 p (pk) , peak transient power (w) single pulse r ja = 210 o c/w t a = 25 o c t, pulse width (s) 0.5 typical characteristics (q1 n-channel) t j = 25c unless otherwise noted
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 6 www.fairchildsemi.com FDME1034CZT rev.c figure 12. 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.005 0.01 0.1 1 2 single pulse r ja = 210 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a junction-to-ambient transient thermal response curve typical characteristics (q1 n-channel) t j = 25c unless otherwise noted
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 7 www.fairchildsemi.com FDME1034CZT rev.c typical characteristics (q2 p-channel) t j = 25 c unless otherwise noted figure 13. on- region characteristics figure 14. normalized on-resistance vs drain current and gate voltage figure 15. normalized on-resistance vs junction temperature figure 16. on-resistance vs gate to source voltage figure 17. transfer characteristics figure 18. source to drain diode forward voltage vs source current 0 0.5 1.0 1.5 2.0 0 2 4 6 v gs = -3 v v gs = -2.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = - 1.8 v v gs = -1.5 v v gs = -4.5 v -i d , drain current (a) -v ds , drain to source voltage (v) 0246 0 1 2 3 v gs = -1.8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance -i d , drain current (a) v gs = -4.5 v v gs = -2.5 v v gs = -1.5 v v gs = -3 v -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = -2.3 a v gs = -4.5 v normalized drain to source on-resistance t j , junction temperature ( o c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 i d = -2.3 a t j = 25 o c t j = 125 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max 0.0 0.5 1.0 1.5 2.0 0 2 4 6 v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c t j = 150 o c -i d , drain current (a) -v gs , gate to source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v)
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 8 www.fairchildsemi.com FDME1034CZT rev.c typical characteristi cs (q2 p-channel) t j = 25c unless otherwise noted figure 19. gate charge characteristics figure 20. capacitance vs drain to source voltage f i g u r e 2 1 . f o r w a r d b i a s s a f e operating area f i g u r e 2 2 . g a t e l e a k a g e c u r r e n t v s gate to source voltage fig 23. single pulse maximum power dissipation 0246 0.0 1.5 3.0 4.5 i d = -2.3 a v dd = -10 v v dd = -8 v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -12 v 0.1 1 10 20 10 100 1000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss 0.1 1 10 60 0.01 0.1 1 10 dc 10 s 1 s 100 ms 10 ms 1 ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 210 o c/w t a = 25 o c 0 3 6 9 12 15 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 v ds = 0 v t j = 25 o c t j = 125 o c -v gs , gate to source voltage (v) -i g , gate leakage current (a) 10 -3 10 -2 10 -1 110 100 1000 0.3 1 10 50 p (pk) , peak transient power (w) single pulse r t ja = 210 o c/w t a = 25 o c t, pulse width (s)
typical characteristics (q2 p-channel) t j = 25 c unless otherwise noted figure 24. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 110 100 1000 0.01 0.1 1 single pulse r ja = 210 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 9 www.fairchildsemi.com FDME1034CZT rev.c
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 10 www.fairchildsemi.com FDME1034CZT rev.c dimensional outlin e and pad layout
FDME1034CZT complementary powertrench ? mosfet ?2009 fairchild semiconductor corporation 11 www.fairchildsemi.com FDME1034CZT rev.c trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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